Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts

Anatole Desthieux , Jorge Posada , Pierre-Philippe Grand , Cédric Broussillou , Barbara Bazer-Bachi , Gilles Goaer , Davina Messou (1) , Muriel Bouttemy (1) , Etienne Drahi , Pere Roca I Cabarrocas (2)

1 ILV - Institut Lavoisier de Versailles
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]

Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiO x), doped polycrystalline silicon (poly-Si) and silicon nitride (SiN x :H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p +) microcrystalline silicon (mc-Si:H). We report on the impact of this deposition step on the SiO x layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiO x \(p +) mc-Si\SiN x :H with no annealing step.

Domaines: Biotechnologie

Anatole Desthieux, Jorge Posada, Pierre-Philippe Grand, Cédric Broussillou, Barbara Bazer-Bachi, et al.. Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts. EPJ Photovoltaics, 2020, 11, ⟨10.1051/epjpv/2020001⟩. ⟨hal-03447251⟩