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Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts

Abstract : Passivating contacts are becoming a mainstream option in current photovoltaic industry due to their ability to provide an outstanding surface passivation along with a good conductivity for carrier collection. However, their integration usually requires long annealing steps which are not desirable in industry. In this work we study PECVD as a way to carry out all deposition steps: silicon oxide (SiO x), doped polycrystalline silicon (poly-Si) and silicon nitride (SiN x :H), followed by a single firing step. Blistering of the poly-Si layer has been avoided by depositing (p +) microcrystalline silicon (mc-Si:H). We report on the impact of this deposition step on the SiO x layer deposited by PECVD, and on the passivation properties by comparing PECVD and wet-chemical oxide in this hole-selective passivating contact stack. We have reached iVoc > 690 mV on p-type FZ wafers for wet-chemical SiO x \(p +) mc-Si\SiN x :H with no annealing step.
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https://hal.archives-ouvertes.fr/hal-03447251
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Submitted on : Wednesday, November 24, 2021 - 5:03:03 PM
Last modification on : Saturday, December 4, 2021 - 3:57:21 AM

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Anatole Desthieux, Jorge Posada, Pierre-Philippe Grand, Cédric Broussillou, Barbara Bazer-Bachi, et al.. Impact of PECVD μc-Si:H deposition on tunnel oxide for passivating contacts. EPJ Photovoltaics, EDP sciences, 2020, 11, ⟨10.1051/epjpv/2020001⟩. ⟨hal-03447251⟩

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