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Role of H 3 + ions in deposition of silicon thin films from SiH 4 /H 2 discharges: modeling and experiments

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https://hal.archives-ouvertes.fr/hal-03447562
Contributor : Pere Roca I Cabarrocas Connect in order to contact the contributor
Submitted on : Wednesday, November 24, 2021 - 5:37:38 PM
Last modification on : Saturday, December 4, 2021 - 3:57:21 AM

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Tinghui Zhang, Jean-Maxime Orlac’h, Monalisa Ghosh, Vincent Giovangigli, Pere Roca I Cabarrocas, et al.. Role of H 3 + ions in deposition of silicon thin films from SiH 4 /H 2 discharges: modeling and experiments. Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (7), pp.075024. ⟨10.1088/1361-6595/ac0da2⟩. ⟨hal-03447562⟩

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